mtd: nand: Fix regression in BBM detection

Commit c7b28e25cb ("mtd: nand: refactor BB 
marker detection") caused a regression in detection of factory-set bad 
block markers, especially for certain small-page NAND. This fix removes 
some unneeded constraints on using NAND_SMALL_BADBLOCK_POS, making the 
detection code more correct.

This regression can be seen, for example, in Hynix HY27US081G1M and
similar.

Signed-off-by: Brian Norris <norris@broadcom.com>
Tested-by: Michael Guntsche <mike@it-loops.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
This commit is contained in:
Brian Norris 2010-08-18 11:25:04 -07:00 committed by David Woodhouse
parent 93b352fce6
commit 065a1ed8de

View File

@ -2934,14 +2934,10 @@ static struct nand_flash_dev *nand_get_flash_type(struct mtd_info *mtd,
chip->chip_shift = ffs((unsigned)(chip->chipsize >> 32)) + 32 - 1;
/* Set the bad block position */
if (!(busw & NAND_BUSWIDTH_16) && (*maf_id == NAND_MFR_STMICRO ||
(*maf_id == NAND_MFR_SAMSUNG &&
mtd->writesize == 512) ||
*maf_id == NAND_MFR_AMD))
chip->badblockpos = NAND_SMALL_BADBLOCK_POS;
else
if (mtd->writesize > 512 || (busw & NAND_BUSWIDTH_16))
chip->badblockpos = NAND_LARGE_BADBLOCK_POS;
else
chip->badblockpos = NAND_SMALL_BADBLOCK_POS;
/* Get chip options, preserve non chip based options */
chip->options &= ~NAND_CHIPOPTIONS_MSK;